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| CEM8206 Feb. 2003 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V , 6A , RDS(ON)=20m @VGS=4.5V. RDS(ON)=30m @VGS=2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package. 1 2 3 4 5 D1 8 D1 7 D2 6 D2 5 SO-8 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 20 12 6 24 6 2 -55 to 150 Unit V V A A A W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 62.5 C/W 5-73 CEM8206 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter 5 Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS c Condition VGS = 0V, ID = 250A VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VDS = VGS, ID = 250A VGS = 4.5V, ID = 6.0A VGS = 2.5V, ID = 5.2A VDS = 5V, VGS = 4.5V VDS =10V, ID = 6.0A Min Typ C Max Unit 20 1 100 0.5 17 23 10 7 16 950 450 135 1.5 20 30 V A nA V m m A S OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS c PF PF PF VDS =8V, VGS = 0V f =1.0MHZ SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 10V, ID = 1A, VGS = 4.5V, RGEN = 6 20 20 72 20 15 40 40 130 40 20 ns ns ns ns nC nC nC VDS =10V, ID = 6A, VGS =4.5V 5-74 3.4 1.2 CEM8206 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is =1.7A Min Typ Max Unit 5 0.75 1.2 V C DRAIN-SOURCE DIODE CHARACTERISTICS b Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 20 25 VGS=4.5,3.5,2.5V 16 VGS=2.0V 20 ID, Drain Current(A) ID, Drain Current (A) 12 15 8 10 4 5 Tj=125 C 0 0.0 0.5 1 1.5 25 C -55 C 2 2.5 3 VGS=1.5V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 2400 2000 Figure 2. Transfer Characteristics 1.80 1.60 1.40 1.20 1.00 0.80 0.60 -50 -25 0 25 50 75 100 125 150 ID=6.0A VGS=4.5V C, Capacitance (pF) 1600 1200 800 Coss 400 Crss 0 Ciss 0 2 4 6 8 10 12 VDS, Drain-to Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature 5-75 CEM8206 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.60 1.40 1.20 1.00 0.80 0.60 0.40 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A 1.15 ID=250 A 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 5 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 30 Figure 6. Breakdown Voltage Variation with Temperature 50 gFS, Transconductance (S) Is, Source-drain current (A) 25 20 15 10 VDS=10V 5 0 0 3 6 9 12 15 10 1 0.1 0.4 0.6 0.8 1.0 1.2 IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 5 ID, Drain Current (A) Figure 8. Body Diode Forward Voltage Variation with Source Current VGS, Gate to Source Voltage (V) 4 3 2 1 0 0 VDS=4.5V ID=6A 10 1 RD S( ON )L im it 10 1m m s 10 10 s 0m 1s s s 10 0 DC 10 -1 -2 10 TA=25 C Tj=150 C Single Pulse 10 1 10 0 10 1 2 4 6 8 10 12 14 16 10 -1 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 9. Gate Charge 5-76 Figure 10. Maximum Safe Operating Area CEM8206 VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 5 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 10 2 0 r(t),Normalized Effective Transient Thermal Impedance 1 D=0.5 Duty Cycle=0.5 0.2 10 -1 0.1 0.2 0.05 0.1 10 -2 0.1 0.02 0.05 0.01 0.02 Single Pulse Single Pulse PDM t1 PDM t2 t1 t2 1. R JA (t)=r (t) *JA (t)=r (t) * R JA 1. R R JA 2. R JA=See R JA=See Datasheet 2. Datasheet P* R JA (t) 3. TJM-TA =3. TJM-TA = PDM* R JA (t) 4. Duty Cycle, D=t1/t2 D=t1/t2 4. Duty Cycle, 10 10 -2 -2 0.01 10 -3 10 -4 10 10 -3-3 10 -1 10 -1 10 0 1 10 1 10 10 2 100 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 5-77 |
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